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논문명(출판명)
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출처
Full wafer scale near zero residual nano-imprinting lithography using UV curable monomer solution
Author
H. Lee and G.Y. Jung
Year
2005
Source
Microelectronic Eng., 77, 42 (2005)
Wafer to wafer nano-imprinting lithography with monomer based thermally curable resin
Author
H. Lee and G.Y. Jung
Year
2005
Source
Microelectronic Eng., 77, 168 (2005)
One kilobit cross-bar molecular memory circuits at 30 nm half pitch fabricated by nanoimprint lithography
Author
W. Wu, G.Y. Jung, D.L. Olynick, J. Straznicky, Z. Li, X. Li, D.A.A. Ohlberg, W.M. Tong, S.Y. Wang, and R.S. Williams
Year
2005
Source
Appl. Phy. A., 80, 1173 (2005)
Ultra-smooth platinum surfaces for nanoscale devices fabricated using chemical mechanical polishing
Author
M. Saif Islam, G.Y. Jung, T. Ha, D.R. Stewart, Y. Chen, S.Y. Wang, and R.S. Williams
Year
2005
Source
Appl. Phy. A., 80, 1385 (2005)
Improved pattern transfer in nanoimprint lithography at 30 nm half-pitch by substrate-surface functionalization
Author
G.Y. Jung, W. Wu, W.M. Tong, S.Y. Wang and R.S. Williams
Year
2005
Source
Langmuir, 21, 6127 (2005)
Fabrication of multi-bit crossbar circuits at sub-50 nm half-pitch by using UV-based nanoimprint lithography
Author
G.Y. Jung, W. Wu, H. Lee, S.Y. Wang, W.M. Tong and R.S. Williams
Year
2005
Source
J. Photopoly. Sci. Technol., 18, 565 (2005)
Issues on nanoimprint lithography with a single-layer resist structure
Author
G.Y. Jung, W. Wu, S. Ganapathiappan, D.A.A. Ohlberg, M. Saif Islam, X. Li, D.L. Olynick, H. Lee, Y. Chen, S.Y. Wang, W.M. Tong and and R.S. Williams
Year
2005
Source
Appl. Phy. A., 81, 1331 (2005)
Micro-casted silicon carbide nano-imprinting stamp
Year
2004
Fabrication of molecular-electronic circuits by nanoimprinting lithography at low temperature and pressure
Author
G.Y. Jung, S. Ganapathiappan, X. Li, D.A.A. Ohlberg, D.L. Olynick
Year
2004
Source
Y. Chen, W.M. Tong, R.S. Williams, Appl. Phys. A., 78, 1169 (2004)
Template stripping using cold-welding
Author
J.J. Blackstock, Z. Li and G.Y. Jung
Year
2004
Source
J. Vac. Sci. Technol. A., 22(3), 602 (2004)
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